Abstract
We report on the synthesis and characterization of hexagonal boron nitride nanosheets (BNNSs) for deep ultraviolet (DUV) photodetector applications. The vertical structure metal-semiconductor-metal (MSM) solar-blind DUV photodetector based on BNNSs has been fabricated and tested. The detector performance is stable under UV radiation at temperatures exceeding 100°C. The bandgap engineered material has a cutoff wavelength of approximately 250 nm and does not respond to any longer wavelength or visible light. The photodetector demonstrates the advantages of hexagonal BNNSs as a wide band gap material for DUV detection in harsh environments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
