Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Abstract

Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage ( I-V) measurements. It is found that the top-to-substrate vertical breakdown voltage (BV) is dominated by the space-charge-limited current conduction involving both acceptor and donor traps in the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at EV + 543 meV and the donor level at EC-616 meV were identified.