Vertical Integration of Pressure/Humidity/Temperature Sensors for CMOS-MEMS Environmental Sensing Hub

Abstract

This study presents the environmental sensing hub with vertical integration of humidity, pressure, and temperature sensors on a single chip (Fig. 1). The presented device is fabricated through TSMC 0.18 <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">µ</inf> m 1P6M CMOS platform, and in-house post-CMOS processes. The proposed environmental sensing hub has following features: (1) monolithic integration of humidity (H), pressure (P), and temperature (T) sensors to form the sensing hub, (2) vertical integration of H/P/T sensors to reduce the footprint of chip (as compare with the existing side by side designs). Measurement results of presented environmental sensing hub are: humidity sensor with sensitivity of 2.025fF/%RH, pressure sensor with sensitivity of 0.38fF/kPa, and diode temperature detector with sensitivity of 1.6mV/ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sup> C.