Abstract
High quality GaSb single crystals were grown in an original vertical gradient freeze furnace. A double chemical etching procedure is used to reveal dislocation etch pits on both kinds of (111) surfaces. Densities below 100 per cm 2 could be obtained. A new mechanism for dislocation elimination during growth is proposed and the value of the critical stress for dislocation multiplication is estimated to be 3 daN cm −2 with the help of both finite elements calculations and experimental data. Hall mobility and resistivity measurements in a wide temperature range that led to the estimation of an acceptor level at 26 meV are presented; they prove the good electronic behaviour of the crystals.
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