Abstract
We present full-quantum simulations of a vertical III–V semiconductor tunnel field-effect transistor based on a broken-gap heterojunction, where the GaSb bottom layer and the InAs top layer are separated by a large-gap AlSb interlayer. Our approach based on the nonequilibrium Green’s function formalism takes into account the scattering with acoustic and optical phonons. The impact of different design options, such as the length of the gate overlap, the gate extensions, and the barrier thickness, is comprehensively investigated. We show that, under specific conditions, steep subthreshold swings smaller than 30 mV/dec can be achieved with an ON/OFF current ratio larger than 107 for a supply voltage of 0.3 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
