Abstract
The vertical conductivity of the p-Al 0.11Ga 0.89N/GaN SLs has been measured and calculated. The measured result (1.35×10 −5 S cm −1) is in good agreement with the calculated result (2.26×10 −5 S cm −1), indicating that the adoption of Fermi–Dirac distribution and sequential tunneling model in our calculation is very plausible. As a result, it is suggested that in p-AlGaN/GaN SLs the Fermi–Dirac distribution need to be considered in calculation related to hole distribution.
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