Abstract
We have found composition variations along the growth direction within regions of nominally constant indium composition in InGaN light emitting diode structures grown by metal-organic chemical vapor deposition using atomic resolution Z-contrast imaging in a scanning transmission electron microscope (STEM). Within 60 nm thick nominally In<sub>0.01</sub>Ga<sub>0.99</sub>N layers, we found periodic enhancements in the indium concentration into 4 bands separated by 11 nm. Energy dispersive spectroscopy spectrum imaging confirmed that the higher intensity in the high angle annular dark field (HAADF) Z-contrast STEM images was in fact caused by locally higher indium concentration. We observed no lateral indium composition fluctuations.
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