Abstract
The letter elucidates the room temperature pulsed operation of a vertical cavity surface-emitting (SE) laser with an electrically conductive AlGaAs/AlAs distributed Bragg reflector (DBR). The maximum reflectivity of a DBR grown by MOCVD was 96% at 0.88 μm wavelength. The threshold current of 30 μm diameter devices was 200 mA under room temperature pulsed condition, which is the lowest value for such a broad area structure.
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