Abstract
CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30mm were grown using a Modified Vertical Bridgman (MVB) method. Current–voltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010Ωcm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 10–20μm in diameter and within the range 1×104–3×104cm−3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10−3cm2V−1 and 3.0×10−5cm2V−1, respectively.
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