Vertical Beam Angle Control: an Advancement∕Requirement in Modern Ion Implant Manufacturing

Abstract

As the industry moves to the new technology nodes of 45 nm and 32 nm devices, implant angle control becomes even more crucial for consistent device performance. Commercial single wafer ion implanters are able to measure and correct the horizontal incident angle of the ion beam. But the vertical beam angle (VBA) control has become a very important parameter as well. In this work the authors demonstrate the impact of a tilt variation for a 65 nm and a 45 nm MOS transistor generated by different beam setups on one machine. Comparisons are made for each technology with a controlled angle variation of ±4°. The Vt‐distribution should be reduced with better incident angle control allowing faster development of a new transistor node base line using the new VBA control technique from Axcelis.