Abstract
Arc discharge detection is a preeminent strategy for diagnosing aging of high-power electric equipment. Therefore, the timely detection of arc discharge can prevent immense disasters, such as massive fire accidents. Ultraviolet C (UVC) photodetectors (PD) are effective devices for optical arc discharge detection because of their solar blindness, which enables noise-free and highly selective arc discharge detection. In this study, we developed a solution-processed β-Ga2O3-based vertical asymmetric metal-semiconductor-metal (MSM) UVC PD as a high-performance and inexpensive UVC detector. The high bandgap of photoactive β-Ga2O3 (4.7–5.1 eV) enables selective UVC detection. The Schottky barrier heights at two different metal-semiconductor junctions (PEDOT:PSS/β-Ga2O3 and ITO/β-Ga2O3) were systematically modulated by varying the β-Ga2O3 film annealing temperature and thickness, which enabled fast photoresponse and self-powered operation, as demonstrated by various optical and electrical analyses. The optimized device exhibited a fast photoresponse (rise/fall time of 67/53 ms) and high responsivity (41 mA W−1) and detectivity (1.5×1011 Jones) in self-powered mode. The instantaneous arc discharge was successfully detected using the β-Ga2O3 based vertical MSM PD, demonstrating its feasibility for arc discharge detection. Thus, this study provides new insights into inexpensive self-powered PDs that can be implemented for the facile and prompt monitoring of aging electric equipment and prevention of potential fire accidents.
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