Abstract
In this paper we present a novel single-step RIE process for InP membrane optical waveguide etching. The optimization of the process is focused on the sidewall verticality and surface roughness of the etched profile. Significant improvement on the etched profile is achieved for the first time in a single-step RIE process. Loss measurement on fabricated membrane waveguides etched with the proposed RIE process results in a record low waveguide propagation loss (2.5 dB/cm).
Highlights
The InP membrane on Si (IMOS)[1,2] is regarded as the nextgeneration generic InP photonic integration platform.[3]
In this paper we present a single-step reactive ion etching (RIE) process based on CH4/H2/Ar chemistry for the optimized etching of InP-based IMOS waveguides
The low sidewall roughness is verified by loss measurement in membrane waveguides which are fabricated with our proposed RIE process
Summary
Is iterated with short O2 descum to control the etched profile, the single-step process uses constant process condition throughout the entire etching. The process pressure has a direct influence on the surface roughness after etching.[12] Higher process pressure decreases the mean path of the reactive ions, which result in more collisions and more isotropic etching. Surface roughness decreases as the process pressure increases. On the other hand high pressure influences the verticality of the etched profile. A high process pressure increases the etch rate due to the increase of the radical density. The tests are based on an original single-step RIE recipe from SENTECH. In this test, the thin membrane samples are
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