Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate

Abstract

Despite of the technological importance of developing AlGaN deep UV LEDs on Si, there are only a few reports about AlGaN deep UV LEDs on Si based on AlGaN epilayers. Herein, we show vertical AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayer. The devices emit at 278 nm, with uniform current injection. Compared to devices using standard p-AlGaN epilayer, the series resistance of devices with polarization enhanced p-AlGaN epilayer is reduced by a factor of 5. This work represents the first report of AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayers.