Abstract
A vertical AlGaN deep ultraviolet (DUV) light emitting diode (LED) emitting at 322nm was fabfricated by the laser lift-off technique. The emission area extended to the entire electrode uniformly, and the current crowding was suppressed effectively in the devices. As a result, the differential conductance of the vertical LED was improved by a factor of 5 and the operation voltage was reduced to half, compared to that of the lateral LED. The self-heating effect was effectively suppressed even at high-current-density operation. The vertical structure in the high resistive AlGaN LED has potential application in high-power AlGaN DUV devices.
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