Abstract
The design, use, and performance of cryostat systems for ion implantation at temperatures between 7 and 300 K are described. Special features of the cryostat systems are: (i) a trapped-gas heat exchanger; (ii) a sliding gate valve to allow separation from the implantation line vacuum; (iii) a rotatable tail section with optical windows; and (iv) ion-beam location plates. The systems have been used successfully to study the effects of ion implantation into solids at controlled temperatures between 7 and 300 K, and to study isothermal and isochronal annealing of solid materials following implantation at low temperatures.
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