Abstract
We present the first Verilog-A based models of a magneto-electric magnetic tunnel junction (ME-MTJ) based XNOR and NOR logic gates. The ME-MTJ is a low-power beyond-CMOS technology, with possible applications in memory and logic devices. The models presented here have been developed in Verilog-A and validated with simulations using cadence spectre. We show the operation of this ME-MTJ dual-purpose logic gate illustrating integrated memory capabilities. A full adder based on the XNOR gate is also validated.
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