Abstract
The theoretical collector current model for SiGe-based heterojunction bipolar transistors under parallel–perpendicular kinetic energy coupling and anisotropic masses was validated. Verification was performed by comparison to Monte Carlo (MC) calculations and experimental data obtained from previous publications. Collector current against base-emitter voltage obtained by the present model is comparable to that calculated by the MC method. The measured collector currents as a function of base-collector voltage agreed well with the calculated currents for base-emitter voltages ranging from 0.3 to 0.6 V.
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