Abstract
Velocity modulation using AlxGa1−xAs layers is, in principle, an attractive way of improving the efficiency of conventional GaAs impact avalanche transit-time (IMPATT) devices. Critical to the concept, however, is a detailed understanding of the nature of high-field electron transport in AlxGa1−xAs. We explore this via Monte Carlo simulations, with particular reference to the behavior found under nonuniform field conditions. Preliminary experimental results are presented for a simple, single-drift IMPATT diode in which the drift region is made entirely from Al0.3Ga0.7As.
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