Abstract
The base-collector capacitance C/sub bc/ and the collector transit time delay /spl tau/c govern the high-speed performance of modern heterojunction bipolar transistors (HBTs). Both are shown to be strongly modified by velocity modulation effects in InP/InGaAs HBTs: The carrier velocity in the collector depends on V/sub cb/ and I/sub c/, causing a reduction of C/sub bc/ and /spl tau/c respectively. The current induced transit time modulation is shown to be conveniently expressed by a minor but important modification of the conventional transit time delay expression. Particle simulations are performed to assess the relevance of these effects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
