Abstract
Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.
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