Abstract
On-wafer noise temperature measurements are performed using receiver noise parameters for error correction. Accuracy in one-port measurements of on-wafer noise temperature made with commercial systems is demonstrated without using isolators. Equations for correcting mismatch errors are properly applied to the on-wafer environment as part of the available vector noise temperature equation. To test the measurement system, known off-wafer noise sources were used to obtain predictable on-wafer noise temperatures. These on-wafer noise temperatures were then measured and compared to predictions. Measured test results, presented for a C-band solid-state cold noise source and a pair of microwave solid-state noise diodes, are shown to be in good agreement with the predicted on-wafer noise temperature of the same sources with worst-case disagreement of 7.4%. Measured on-wafer device under test results, presented for a microwave monolithic integrated circuit active cold load, were in good agreement with values predicted from measured forward noise parameters.
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