Abstract
The generation of mode-locked pulses in vertical external-cavity surface-emitting lasers with a semiconductor saturable absorber mirror is studied by numerically solving the Maxwell semiconductor Bloch equations describing the propagating light field coupled to the electron-hole-pair excitations in the quantum wells. High peak-power sub-100 fs mode-locked pulses are realized through optimizing the gain chip design. The unequal spacing of up to four quantum wells in a given field antinode leads to a broad linear gain profile and reduced intracavity dispersion. The proposed designs are found to be robust with regard to uncontrollable growth uncertainties.
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