V-doping effects on ferroelectric properties of K 0.5Bi 4.5Ti 4O 15 thin films

Abstract

V-doped K 0.5Bi 4.5Ti 4O 15 (K 0.5Bi 4.5 − x/3 Ti 4 − x V x O 15, KBTiV- x, x = 0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO 2/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 °C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2 P r ) was 75 μC/cm 2 at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 × 10 − 8 at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K 0.5Bi 4.5Ti 4O 15 thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K 0.5Bi 4.5Ti 4O 15 thin film.