VBBMS: A Novel Buffer Management Strategy for NAND Flash Storage Devices

Abstract

NAND flash storage devices are gaining popularity in consumer electronic devices, such as digital cameras, tablet PCs, and smartphones, due to their attractive features. However, write operations significantly limit the performance of the flash storage in consumer electronics devices due to their long latency and heavy overhead of garbage collection. Hence, NAND flash storage devices generally use RAM memory as a buffer to improve their write performance and to extend their lifetime. This paper proposes a novel buffer management algorithm (BMA), called as virtual-block-based buffer management scheme (VBBMS), which can make full use of both temporal and spatial localities at virtual-block level. The main difference with the existing BMAs is that the management granularity of VBBMS is a virtual block, while the management granularity of existing BMAs is a page or a block. In addition, VBBMS divides RAM into random request service region (RRSR), which is responsible for handling random requests, and sequential request service region (SRSR), which is responsible for handling sequential requests. When replacement happens, VBBMS selects victim virtual-block according to LRU policy in RRSR and first-in first-out (FIFO) policy in SRSR. VBBMS has been extensively evaluated under various realistic workloads, and our benchmark results show that VBBMS can improve buffer hit ratio, reduce response time, and erase times, compared to five existing BMAs.