Abstract
The formation mechanism of the varistor effect in composites based on polar (polyvinylidene fluoride) and nonpolar (polyethylene, polypropylene) polymers and semiconductors (silicon and germanium) is studied. It is shown that the varistor effect in polymer-semiconductor composites is caused by carrier tunneling transport through the barrier at the phase interface, the parameters of which depend on the voltage, temperature, volume concentration and dispersion of semiconductor particles, and permittivity of composite components.
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