Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)

Abstract

We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes (SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the TaN and ITO Schottky contact deposited by RF sputtering method was increased compared to the widely used Ni/Au Schottky contact. The extracted Schottky barrier height (SBH) of TaN and ITO was 0.62 eV and 0.54 eV respectively while that of Ni/Au was 0.51 eV. The reverse blocking characteristics such as the leakage current and breakdown voltage was improved by TaN and ITO Schottky contact due to its high SBH. However, forward current of TaN and ITO Schottky contact was less than that of Ni/Au Schottky contact. The TaN Schottky SBDs achieved highest breakdown voltage of 605 V and ITO Schottky SBDs achieved 472 V. On the contrary, the breakdown voltage of Ni/Au Schottky SBDs exhibits 335 V.