Abstract
Various methods for the growth of GaSb single crystals have been tried. It has been found that the oxidation of the GaSb surface and the low vapor pressure of GaSb material are main problems. For this reason the Czochralski method without encapsulant in a flow of very pure hydrogen seems to be the most suitable technique. Other tested methods have not been acceptable for several reasons (the economic point of view, quality of the crystals, highly complicated equipment, etc.). The Czochralski technique with the use of hydrogen reduces the formation of the oxide layer and makes it possible to grow fully single crystalline, high-quality GaSb with low dislocation density (< 10 2 cm −2).
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