Abstract

Oxygen has been investigated mostly in silicon because it is a residual pollutant with both detrimental and beneficial effects in this material. A wealth of information is therefore available on isolated oxygen in silicon, but it seems difficult to extrapolate to oxygen in other semiconductors because of differences in chemical reactivities and lattice relaxations. The aim of this review is to try to compare the situation in silicon with that in other semiconductors where isolated oxygen has been identified. I will present an overview of the evolution of our knowledge of the structure and dynamics of Oi in silicon, based on a comparison between the IR data and theoretical predictions and I will point out the similarities and differences with oxygen in germanium, gallium arsenide and gallium phosphide. I will make a parallel between the piezo-spectroscopic results on interstitial (Oi) and quasi-substitutional (off-centre or oxygen-vacancy) forms in GaAs and in Si. I will present a summary of the illumination effects observed for the oxygen-vacancy (OVAs) in semi-insulating (SI) GaAs in relation with changes in the charge states and metastability of this centre. I will discuss finally the properties of substitutional oxygen in GaP and other semiconductors.

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