Abstract
A Cu-deficient Cu(In,Ga)Se2 (CIGS) absorber layer with different deposition time of third stage was fabricated using three-stage co-evaporation process. An appropriate deposition time not only eliminated excess Cu2−xSe but also formed the order defect compound (ODC) phase near the CIGS surface. This ODC surface phase can minimize the recombination rate between absorber and buffer layer. The highest efficiency of 15.82% was achieved when the deposition time was 7 min and bulk [Cu]/([In] + [Ga]) ratio at the end of the three-stage process was 0.98. It indicated that the suitable deposition time of third stage and [Cu]/([In] + [Ga]) ratio could improve the defect concentration, surface properties and recombination of interface between CIGS/CdS.
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