Abstract
Variations in microhardness and impurity composition of surface layers in silicon crystals caused by a magnetic field are observed. It is assumed that the mechanism of slow structural relaxation in silicon crystals is related to an increase in the adsorption function of silicon as a result of the effect of a magnetic field; this mechanism underlies the magnetomechanical effect (the effect of variation in microhardness).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
