Abstract
The broadening and changes in optical parameters of TiO2/SiO2 transition layers irradiated with Xe+ ions of energies 100, 150, 200, and 250 keV have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE) methods. We observed that a rise in atomic mixing at the TiO2/SiO2 interface increases its transition layer thickness with increasing ion energy. The discrepancies in transition layers are interpreted by employing the defect profiles and ion energy loss obtained from Stopping and Range of Ions in Matter (SRIM) calculations. The refractive index and the extinction coefficient of irradiated TiO2/SiO2 samples were found to be higher than those of virgin ones with irradiating ion energies below 250 keV. Their disparity heightens with increasing ion energy up to 200 keV and then decreases at 250 keV.
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