Abstract
Atomically thin layers with variable magnetism are highly desirable for next-generation data storage and spintronic devices. Variations of magnetism in two-dimensional (2D) materials have inspired 2D device designs that mimic their functions. In this work, the electronic structure and charge transfer of 2D MnS2 thin films consisting of two monolayers can be changed between two different structures. Variation of magnetism between two different antiferromagnetic (AFM) configurations are realized in the MnS2 thin films. The calculated magnetic anisotropy shows that the easy axes of the thin films are perpendicular to the xy-plane. The underlying variation of magnetism in the air-stable, semiconductive, and facile 2D MnS2 system is revealed. Variations in the magnetism of the 2D thin films are determined from charge transfer between the Mn and S as induced by changes in the stacking orders of the nonmagnetic S atoms. Our propose-designed MnS2 thin films enable emerging 2D magnetism and exotic physical phenomena for nonvolatile spintronic devices that operate without external strains or, electric or magnetic fields.
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