Variation of GaAs Epitaxial Growth Rate with Distance along Substrate within a Constant Temperature Zone

Abstract

On the basis of a model which assumes a laminar boundary layer, a rate equation is derived for the vapor phase epitaxial growth of within a constant temperature zone. The equation can be used to predict the variation of growth rate with distance along the substrate. The predictions of the equation are shown to be in excellent agreement with the experimental results obtained with the open‐tube system. It is also shown both theoretically and experimentally that the variation of growth rate decreases with increasing gas velocity and also with decreasing substrate temperature, whereas the initial mole fraction has no effect on the growth rate variation.