Abstract
Applying strain on semiconductors is a powerful method to modulate its electronic structures and optical properties. In this study, the behavior of liquid-nitrogen exciton emissions and the longitudinal optical phonon-exciton interactions of tensile strained [0001]-orientated ZnO whiskers were investigated using in situ cathodoluminescence spectroscopy. It has been found that, under the axial tensile strain, various exciton emissions shift to the long wavelength and their shifts have a linear relationship with the applied strain. This linear relationship and reversible shift suggest that the strain plays a dominating role in manipulating light emissions of axially strained ZnO whiskers.
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