Abstract
25Pb(In 1/2 Nb 1/2 )O 3 -45Pb(Mg 1/3 Nb 2/3 )O 3 -30PbTiO 3 (PIN-PMN-PT) ingots with the dimensions of O55×130mm were successfully grown by vertical Bridgman technique. The as-grown PIN-PMN-PT crystals were oriented and characterized on (001) cuts. Variation of di-/piezoelectric properties of the as-grown PIN-PMN-PT crystals near morphotropic phase boundary (MPB) along the growth direction were investigated. Temperature dependence of dielectric permittivity advised 60∼135°C of rhombohedral to tetragonal phase transition temperature (T rt ) and 120∼210°C of Curie temperature (T c ) near MPB along the growth direction. PIN-PMN-PT crystals have coercive fields (E c ) of about 4.35kV/cm, more than twice that of Pb(Mg 1/3 Nb 2/3 )O 3 -32PbTiO 3 (PMN-PT) and about 1% electric field strain. T c was found to increase linearly along the growth direction and T rt gradually decreased in the middle part of the ingot. The piezoelectric constant, d 33 , increased initially then kept around 2000pC/N at lower but near MPB and the dielectric constant, e r , had the same trend with d 33 falling into the scope of 5000–6300.
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