Abstract
The dependence of contact resistivity on the Ge content in Si1–xGex is examinedfor TiW/p+ Si1–xGex interfaces. Measurements are made on contacts with epitaxial Si1–xGex layers either at the surface or buried under a Si cap layer of various thicknesses. The contact resistivity is found to decrease by an order of magnitude with increasing Ge content from 0 to 30 at. %, which is attributed to an increase in the valence band energy of p+ Si1–xGex. The measured contact resistivity is compared with a theoretical model, and the experimental results agree well with the modelled ones.
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