Abstract
The impurity-defect system in the Cd1 − x ZnxTe crystals (0.02 ≤ x ≤ 0.15) is analyzed prior to and after heat treatment at 720–1170 K. It is found that the conductivity in most of these crystals is governed by two types of acceptors, A 1 (E V = 0.03–0.05 eV) and A 2 (E V = 0.12–0.15 eV). The variation in electrical properties of the crystals after heat treatment depends on the concentration of background impurities in the starting material and the degree of compensation of acceptor A 1. An increase in the resistivity and homogeneity of the samples is observed after two sequential heat treatments.
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