Abstract
Excess currents and defects were investigated in the 4H-SiC p+nn+ structures created by implantation. It was found that the principal p+n junction is shunted by several or multiple Schottky barriers connected in parallel to the principal pn junction and formed by a contact of Al on the surface of p+-layer with n-layer perhaps with participation of carbon coated surfaces of the pits or other defects. Amount and area of Schottky barriers vary for different pn structures, in connection with which vary as the value of the excess current and character of the current-voltage dependence, and, apparently, that was observed in some cases, the instability of excess current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.