Abstract
A new structure of the variable-sensitivity photodetector (VSPD) is proposed. It is based on an interdigital pn-np structure. Analog and bipolar photosensitivities varied by the control voltage are described, and the photocurrent is compared with those of the metal-semiconductor-metal (MSM)-type VSPD. Introduction of the pn-np structure is effective for obtaining high photodetection efficiency, and also for modifying the variable-sensitivity characteristics. These advantages make it attractive for optical implementation of neural networks.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
