Abstract
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.
Highlights
Native p-type conductivity was demonstrated at high temperatures in undoped β-Ga2O3.31,32 It was observed that native p-type conductivity is achievable by creating a significant number of native acceptors (VGa) and suppressing the compensation due to native donors (VO)
The thermodynamic balance required to weaken the self-compensation in undoped β-Ga2O3 was achieved by adjusting the growth temperatures and oxygen partial pressures during the deposition of Ga2O3 on sapphire substrates by Metal–Organic Chemical Vapor Deposition (MOCVD).32,33 p-type β-Ga2O3 is a relatively recent discovery and an uncharted territory in terms of minority carrier transport and scitation.org/journal/apm luminescence characterization as well as their temperature dependences
Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) measurements were performed in situ in a Phillips XL-30 Scanning Electron Microscope (SEM) to characterize the diffusion length (L) of minority carriers and luminescence behavior of the samples, respectively
Summary
Sushrut Modak1 Leonid Chernyak,1,a) Alfons Schulte,1 Corinne Sartel,2 Vincent Sallet,2 Yves Dumont,2 Ekaterine Chikoidze,2 Xinyi Xia,3 Fan Ren,3 Stephen J. The diffusion length of minority carriers (electrons), cathodoluminescence, and their temperature dependence are studied in p-type β-Ga2O3 with two different majority carrier (holes) concentrations.
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