Abstract
The structure and composition of Sb-induced $(2\ifmmode\times\else\texttimes\fi{}4)$ reconstructions on the GaAs(001) surface have been systematically studied using scanning tunneling microscopy, reflectance-difference spectroscopy, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and first-principles calculations. We show that several types of Sb-induced $(2\ifmmode\times\else\texttimes\fi{}4)$ reconstructions are formed, depending on the Sb coverage. The $(2\ifmmode\times\else\texttimes\fi{}4)$ surface with low Sb coverages has the structure with only one anion dimer at the outermost layer. For the Sb-rich $(2\ifmmode\times\else\texttimes\fi{}4)$ phase, on the other hand, we propose the structure model consisting of anion dimers at the first and third layers and three-coordinated As atoms at the second layer.
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