Abstract
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator transition (MIT). Two theoretical models of variable range hopping (VRH) conduction according to Mott (Mott VRH region) and according to Efros-Shklovskii (ES VRH region) are used in the modeling of the experimental measurements obtained by Qiuet et al. [Phys. Rev. Lett. 108, 106404 (2012)].
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