Abstract
The performances of advanced i-line steppers depend on numerous equipment parameters. For example, they are significantly affected by the change in numerical aperture and partial coherence, particularly when operating at the resolution limit. This paper reports on the work carried out at the Centre Commun CNET/SGS-Thomson at Crolles to evaluate the influence of the illumination conditions on the performances (process latitude and proximity effects) of a 1 μm thick i-line resist process for 0.35 μm IC manufacturing. These performances are investigated experimentally and by simulations.
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