Abstract
In this atom probe tomography study of the composition of extended defects in Cu-poor Cu${}_{2}$ZnSnSe${}_{4}$ thin films, the authors detect Na segregation, Cu enrichment, and Zn, Sn, and Se depletion at grain boundaries in a precursor film. Stacking faults show Zn enrichment and Cu and Sn depletion in the same precursor. After an annealing step, the authors observe that the Na excess at grain boundaries is increased by one order of magnitude and that grain boundaries and dislocations in the annealed film exhibit, in general, significantly reduced chemical variations.
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