Abstract
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic and neuromorphic circuits and architectures. To study these circuits and architectures, accurate compact models are needed, which showcase the most important physical characteristics and lead to their specific experimental behavior. If BRS cells are to be used for computation-in-memory or for neuromorphic computing, their dynamical behavior has to be modeled with special consideration of switching times in SET and RESET. For any realistic assessment, variability has to be considered additionally. This study shows that by extending an existing compact model, which by itself is able to reproduce many different experiments on device behavior critical for the anticipated device purposes, variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics. Furthermore, this enables the study of spatial and temporal variability and its impact on the circuit and system level.
Highlights
B IPOLAR Resistive Switching cells (BRS cells) based on the valence change mechanism (VCM) are part of an emerging class of resistive devices and are viewed to be promising candidates for future nanoelectronic applications [1]–[3]
In [32] we showed a deterministic model, the Jülich Aachen Resistive Switching Tools (JART) VCM v1b model that describes the SET and RESET kinetic behavior with a special focus on the initial states before the SET and the RESET
A deterministic simulation with these parameters will result in the fastest possible device. This kind of analysis can be performed for different cell characteristics like the ranges of low resistive state (LRS) and high resistive state (HRS) as well as for the RESET dynamics and represents a strength of using physically motivated compact models
Summary
B IPOLAR Resistive Switching cells (BRS cells) based on the valence change mechanism (VCM) are part of an emerging class of resistive devices and are viewed to be promising candidates for future nanoelectronic applications [1]–[3]. The SET and RESET operation in VCM cells is based on the redistribution of oxygen vacancies inside the filament in the vicinity of the active electrode. In [28], the authors use a different set of parameters for the SET and for the RESET process in order to better fit the median I-V curves Their model considers variability connected to the state variable, which describes the gap distance between a filament tip and the opposing electrode. For [32] the equations have been updated and modified and the parameters have been adjusted to better match the dynamics of SET and RESET processes as well as the I-V characteristic with the high resistive state (HRS) and the low resistive state (LRS), compared to JART VCM v1, which was presented in [33]. Circuit simulations have to take a physically motivated variability of the BRS into account
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