Vapour phase growth of semiconducting layers

Abstract

The growth of epitaxial layers of semiconductors by chemical vapour deposition and transport is discussed, and typical practical growth systems are described. The main emphasis is on the open tube flowing gas technique, using halides, hydrides or organometallic compounds. This is the technique most commonly used for epitaxy, having the advantage of allowing comparatively rapid growth of layers of good crystallographic quality over a wide range of thicknesses and doping levels. Examples of the close spacing technique will also be mentioned. Selected applications of these techniques to the growth of Si, II–VI and particularly III–V compounds and alloys are reviewed. Topics covered include preparation of complicated multilayer device structures, impurity incorporation and lattice mismatch effects. Implications for future research are discussed.