Abstract
In this paper the epitaxial deposition of InP in the halide CVD system using an In source and PH 3 is discussed. With HCl as transport agent, the effects of the various growth parameters on the growth rate were determined. A model of growth is discussed, which includes the successive process steps of mass transport in the gas phase, adsorption and chemical reaction at the surface and surface diffusion. Using the values of four adjustable parameters (obtained from fitting to the data on the InCl input pressure dependence of the growth rate), the experimentally found dependence of the rate on the deposition temperature and PH 3 pressure could be reproduced. The study shows the important role of adsorption in the deposition process. On the basis of this study optimum conditions for the reproducible growth of smooth InP films can be derived.
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