Abstract

AbstractA modified vapour phase contact‐free method to grow homogeneous single crystals of II‐VI compounds doped by transition metals is presented. Single crystals of ZnSe:Cr, ZnSe:Fe, ZnSe:Co, ZnSe:Ni, CdSe:Cr, ZnTe:Cr, ZnS:Fe and ZnS:Mn with doping level up to 1019 cm–3 have been grown. Efficient lasing at about 2.5 and 4 µm with ZnSe:Cr and ZnSe:Fe crystals respectively has been achieved. Dependence of Fe2+:ZnSe laser characteristics on temperature is presented in more detail. A possibility of using Cr2+:ZnSe laser in intracavity laser spectroscopy is demonstrated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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