Abstract
The V-grooved GaAs substrate was found to be deformed before starting LPE growth. The groove became noticeably shallow and wide after heat treatment at 850°C for l h in H 2 atmosphere. Vapor-phase transport of GaAs from a convex surface to a concave surface on the V-grooved GaAs substrate was found to be responsible for the deformation. The transport is caused by the dependence of an equilibrium vapor pressure of the substance on the curvature of the surface. A dissociation of GaAs and an evaporation of As at a convex surface may start the transport. Near-congruent evaporation seems to occur in GaAs placed in a closed space, even at a temperature as high as 850°C.
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