Abstract
Cleaning of copper surfaces is required to remove undesired surface oxidation during the interconnect fabrication process. In this work, we examined the vapor-phase cleaning of Cu surfaces using anhydrous N2H4. Gas cluster ion beam (GCIB) depth profiling and elemental analysis using XPS shows that CuxO in the Cu sample, formed after exposure to air, can be effectively reduced to Cu0 at 200 °C. By monitoring the surface chemistry using in-situ reflectance absorption infrared spectroscopy (RAIRS), we found that atomic layer deposition (ALD)-like single exposure of N2H4 at 200 °C can remove the adventitious surface contamination and, most importantly, reduce the Cu2O to metallic Cu.
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